Transistor improvements using an IMPATT collector
Abstract
Improvements in the operation of a transistor-like structure with an IMPATT collector are examined. The proposed name for the device is an Impistor. For a given emitter stripewidth in a transistor-like structure, the Impistor should operate at a frequency between five and ten times higher than for a normal transistor.
- Publication:
-
Electronics Letters
- Pub Date:
- November 1974
- DOI:
- 10.1049/el:19740410
- Bibcode:
- 1974ElL....10..516W
- Keywords:
-
- Avalanche Diodes;
- Bipolar Transistors;
- Equivalent Circuits;
- Frequency Response;
- Current Density;
- Electrical Impedance;
- Ion Impact;
- Negative Resistance Devices;
- P-N Junctions;
- Transit Time;
- Electronics and Electrical Engineering