C. V. King—Acheson Medalist
Abstract
The reasons for the superiority of gallium arsenide over silicon in the case of highly efficient X band diodes are investigated. The characteristics of the depletion-region-width variation mechanism are explored. It is found that theoretical efficiencies in excess of those predicted by the Read sharp-pulse approximation are possible if the diode model is refined to include effects which modify the external current waveform.
- Publication:
-
Electronics Letters
- Pub Date:
- October 1974
- DOI:
- 10.1149/1.2134300
- Bibcode:
- 1974ElL....10..435B
- Keywords:
-
- Avalanche Diodes;
- Gallium Arsenides;
- Microwave Oscillators;
- Power Efficiency;
- Depletion;
- Epitaxy;
- Modulation;
- Performance Prediction;
- Semiconductor Junctions;
- Superhigh Frequencies;
- Waveforms;
- Electronics and Electrical Engineering