Presence of electric field strength in quasi-neutral regions of a transistor
Abstract
In modern transistor devices fabricated by multiple diffusion of impurities there exists an electric field in isolated regions due to nonhomogeneous doping. A general model is developed for investigating the effects of this field for random electric fields and real doping concentrations in the element. Two other models are given for comparison: a classical model which neglects the electric fields, and a model in which field strength is assumed to be constant.
- Publication:
-
Elektrotehniski Vestnik
- Pub Date:
- April 1974
- Bibcode:
- 1974EVest..41...91Z
- Keywords:
-
- Electric Field Strength;
- Impurities;
- Mathematical Models;
- Transistors;
- Additives;
- Carrier Mobility;
- Diffusion;
- Minority Carriers;
- Recombination Reactions;
- Electronics and Electrical Engineering