More precise calculation of the fundamental equations for the blocking contact of a photosensitive semiconductor

Boundary conditions taking the Schottky effect and the voltage drop in the bulk of the semiconductor into account are used in solving the Poisson equation for the potential energy in a depleted layer which forms a contact with a photosensitive semiconductor. The relationships found for the thickness of the depleted layer, the voltage drop, and the distribution of the applied voltage differ considerably from results found by other methods. The present method is applicable to cases in which there are relatively low diffusion potentials and a strongly expressed Schottky effect.