Diffusion effects in the double injection negativeresistance problem
Abstract
Diffusion effects are usually neglected in the consideration of the negativeresistance problem associated with double injection in insulators. In this paper, these effects are taken into account and are shown to be very important in determining the currentvoltage characteristic. It is shown that if the length of the sample is greater than a critical value L_{cr}, the postnegativeresistance regime of the characteristic is one in which current density increases as the square of the applied voltage; and if the sample length is less than L_{cr}, the postnegativeresistance characteristic is one in which current increases at constant voltage. The existence of L_{cr} is shown to be related to the absence of presence of a particular conduction region. The analytic procedure used is the regional approximation method.
 Publication:

Solid State Electronics
 Pub Date:
 February 1973
 DOI:
 10.1016/00381101(73)900373
 Bibcode:
 1973SSEle..16..269V