Linearized Third-Derivative Spectroscopy with Depletion-Barrier Modulation
Abstract
Low-field (third-derivative) electroreflectance spectra taken on fully depleted space-charge regions are shown to be linear in the modulation potential and free from experimentally induced line-shape distortions due to modulation wave-form, dc bias, or barrier-potential effects. Using a metal-semiconductor (Schottky diode) configuration, accurate threshold energies of the E0' triplet of Ge are obtained. The observed spin-orbit-splitting energy of the valence band confirms that the highest transition also occurs at Γ.
- Publication:
-
Physical Review Letters
- Pub Date:
- April 1972
- DOI:
- 10.1103/PhysRevLett.28.913
- Bibcode:
- 1972PhRvL..28..913A