Resistivity, magnetoresistance, and hall effect studies in VO x(0.82 ⩽ x ⩽ 1.0)

Resistivity (ϱ), magnetoresistance ( {∆ϱ}/{ϱ ₀}), and Hall coefficient ( R) measurements were carried out on annealed, polycrystalline, single phase VO _x(0.82 ⩽ x ⩽ 1.0) samples at T = 4.2, 77, 300°K. These samples did not undergo a semiconductor-metal transition; they had room temperature resistivities in the range 10 ^-3 > ϱ > 10 ^-4 Ω cm, small negative values of {dϱ}/{dT}, small Hall coefficients R ∼ 5 × 10 ^-4 cm ³/C, and positive values of {∆ϱ}/{ϱ ₀} at 4.2°K. An overlapping band structure model is proposed to explain these and comparable observations in the literature.