Double-Heterostructure Injection Lasers with Room-Temperature Thresholds as Low as 2300 A/cm2
Abstract
Double-heterostructure AlxGa1-xAs-GaAs- AlxGa1-xAs injection lasers with room-temperature thresholds as low as 2300 A/cm2 have been prepared by solution epitaxy. These lasers have high gain and a low temperature coefficient of the threshold up to the highest temperatures measured, 380 °K.
- Publication:
-
Applied Physics Letters
- Pub Date:
- April 1970
- DOI:
- 10.1063/1.1653213
- Bibcode:
- 1970ApPhL..16..326P