Percolation in Heavily Doped Semiconductors
Abstract
Determination of the detailed nature of the semiconductor-to-metal transition in doped semiconductors is obscured by the random placement of the impurities. We report the results of a Monte Carlo percolation calculation which show that the details of the Hall-coefficient data in Si:P and, less clearly, in Ge:Sb are consistent with the existence of a discontinuous transition from insulator to metal at T=0∘K as the impurity concentration is increased.
- Publication:
-
Physical Review
- Pub Date:
- July 1969
- DOI:
- 10.1103/PhysRev.183.773
- Bibcode:
- 1969PhRv..183..773H