High Field Properties of Pure Niobium Nitride Thin Films
Abstract
Thin films of the rocksalt structure (B1) compounds of the transition metals can be prepared by the method of reactive sputtering. By a refinement of this technique we have produced, for the first time, thin films of niobium nitride (NbN) with transition temperatures similar to those of the bulk materials (≳ 15°K). Films have been prepared on both hastelloy and fused silica substrates. Measurements of the normal state resistivity ρn yield values in excess of 200 μΩ.cm. Preliminary studies of the resistive transitions in these materials near Tc indicate that Hr(J), the field at which ρ/ρn=1/2, is independent of current density below 200 A/cm2 for films 1000-4000 Å thick. Identifying Hr(J) (J<50 A/cm2) with the upper critical field Hc2(t), the measurements indicate that Hc2(0) is significantly in excess of 200 kOe, and thus is substantially higher than the values obtained for the bulk material. These results are discussed in terms of the current theories of high field superconductivity with particular reference to the importance of Pauli spin paramagnetism and spin-orbit scattering in these materials.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- April 1969
- DOI:
- 10.1063/1.1657941
- Bibcode:
- 1969JAP....40.2153D