Theoretical investigation of the conduction band carrier density in InSb under carrier multiplication conditions
Abstract
The dependence of the conduction band carrier density on the applied d.c. field strength in a bulk InSb crystal under carrier multiplication conditions is investigated. The carrier density is found to increase rapidly near a critical value of the electric field.
- Publication:
-
Physics Letters A
- Pub Date:
- June 1968
- DOI:
- 10.1016/0375-9601(68)91137-7
- Bibcode:
- 1968PhLA...27...90P