Temperature dependence of the energy gap in semiconductors
Abstract
A relation for the variation of the energy gap ( Eg) with temperature ( T) in semiconductors is proposed. Eg ≐ E0 - αT2/( T+ β) where α and β are constants. The equation satisfactorily represents the experimental data for diamond, Si, Ge, 6H-SiC, GaAs, InP and InAs.
- Publication:
-
Physica
- Pub Date:
- 1967
- DOI:
- 10.1016/0031-8914(67)90062-6
- Bibcode:
- 1967Phy....34..149V