Efficient Visible Electroluminescence at 300°K from Ga1-xAlxAs p-n Junctions Grown by Liquid-Phase Epitaxy
Abstract
Efficient visible light emitting diodes have been fabricated from Ga1-xAlxAs. Epitaxial layers were obtained by a modified solution growth technique. External quantum efficiencies of up to 3.3% have been measured at room temperature on diodes, which had their emission at 1.70 eV. The switching time for the light emission at 300°K was measured to be 60 nsec.
- Publication:
-
Applied Physics Letters
- Pub Date:
- August 1967
- DOI:
- 10.1063/1.1755045
- Bibcode:
- 1967ApPhL..11...81R