SpaceCharge Effects on Electron Tunneling
Abstract
The oneelectron (BetheSommerfeld) model of electron tunneling is formulated to describe tunneling when the curvature (electron mass) and centroid of the oneelectron constantenergy surfaces vary across the junction. The conductance for an abrupt GaAs pn tunnel diode is calculated and shown to exhibit minima near zero bias for highly asymmetrical doping ratios. The conductance of metaloxidesemimetal (MOSM) tunnel junctions is evaluated both with and without the inclusion of spacecharge effects and of surface states. All calculations are performed using solvable models for which the WKBJ approximation is not imposed. Neither the removal of the WKBJ approximation nor the spacecharge effects give rise to maxima in the conductance of the MOSM junctions near a band edge.
 Publication:

Physical Review
 Pub Date:
 December 1966
 DOI:
 10.1103/PhysRev.152.683
 Bibcode:
 1966PhRv..152..683B