Electron Tunneling in Metal-Semiconductor Barriers
Abstract
Tunneling through the space-charge region of a uniformly doped semiconductor has been calculated in the effective-mass approximation. The exact solutions of the one-dimensional Schrödinger equation for a parabolic potential are used to determine the transparency of the barrier. Numerical results are presented for parameters appropriate to indium and n-type germanium. An example of experimental results typical of this system is quoted to illustrate qualitative agreement.
- Publication:
-
Physical Review
- Pub Date:
- October 1966
- DOI:
- 10.1103/PhysRev.150.466
- Bibcode:
- 1966PhRv..150..466C