The technique of preparing epitaxial junctions by depositing Germanium on a germ starting from lead, tin, indium, or gallium in a solution is described. The electrical properties of these junctions are specified. In particular, a detailed analysis of the current-voltage characteristic has been made with a large range of temperatures. Some deviations from the simple theory have been obtained. They have been explained in terms of the recombination and generation process in the space charge area, using the model by S AH, N OYCE and S HOCKLEY.