Tunneling Current in Esaki Diodes
Abstract
The integral giving the net tunneling current flowing across the junction in an Esaki diode, I=AE_{c}E_{v}{f_{c}(E) f_{v}(E)}Zρ_{c}(E)ρ_{v}(E)dE is evaluated under the normal assumptions that (ξ_{c}E_{c}) and (E_{v}ξ_{v}) are of the order of 2kT. The resulting expression is I=A''(E_{v}E_{c})^{2}(1 e^{qVkT})(m+n)e^{a2}+(1+e^{qVkT}), where A'' is an arbitrary constant and m, n, and a are functions of the Fermi levels on both sides of the junction, the location of the band edges and the absolute temperature. This expression is plotted as a function of the applied voltage for temperatures of 200°K, 300°K, and 350°K for donor and acceptor concentrations of 10^{19} cm^{3} and 1.6×10^{19} cm^{3}, respectively. The resulting curves compare quite favorably with those of Esaki's.
 Publication:

Physical Review
 Pub Date:
 February 1961
 DOI:
 10.1103/PhysRev.121.1070
 Bibcode:
 1961PhRv..121.1070B