Electron emission from uncoated, reverse biased, silicon p-n junctions has been investigated. A junction with a 1-cm diameter and a reverse bias of 0.1 amp gives rise to an emission current, around its perimeter, of the order of 10-13 amp. The emission commences at fields which are considerably lower than those required for breakdown and is dependent on the junction bias conditions as well as the lattice temperature. The degree of dependence on the lattice temperature is a function of the bias conditions. A simple mechanism is proposed to explain these phenomena.