Steady-state Hall coefficient measurements of optically excited carriers have been made for high-resistivity gold-, iron-, cobalt-, and nickel-doped germanium crystals in the temperature range from 200°K to 54°K. In the spectral region of impurity absorption, (hν<0.7 ev), carriers generated in p-type samples are holes; carriers generated in n-type samples are electrons. In the region of intrinsic absorption, (hν>0.7 ev), Hall coefficient measurements indicate that photoconduction is due primarily to mobile electrons in both p- and n-type high-resistivity samples. These observations suggest that, in the crystals studied, hole trapping is primarily responsible for the intrinsic photosensitivity in both n- and p-type samples. These results are qualitatively consistent with the double-acceptor model, proposed to account for the two impurity levels introduced into Ge by each of the aforementioned impurities.