Semiconducting Cadmium Telluride

Both n-type and p-type conductivity can be obtained in cadmium telluride. The intrinsic band gap of cadmium telluride is 1.45 ev. Electron and hole mobilities are at least 30 cm²/volt sec. The activation energies of p-type impurities are much larger than those of n-type impurities in cadmium telluride, indicating an explanation for the failure to find p-type conductivity in cadmium sulfide or selenide.