Enhancement of Ferroelectricity in Strained BaTiO3 Thin Films

Biaxial compressive strain has been used to markedly enhance the ferroelectric properties of BaTiO₃ thin films. This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temperature nearly 500°C higher and a remanent polarization at least 250% higher than bulk BaTiO₃ single crystals. This work demonstrates a route to a lead-free ferroelectric for nonvolatile memories and electro-optic devices.