Exploiting Fringing Fields Created by High-κ Gate Insulators to Enhance the Performance of Ultrascaled 2-D-Material-Based Transistors
Abstract
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- September 2021
- DOI:
- 10.1109/TED.2021.3096178
- Bibcode:
- 2021ITED...68.4618B