Improved Switching Stability and the Effect of an Internal Series Resistor in HfO2/TiOx Bilayer ReRAM Cells Hardtdegen, Alexander ; La Torre, Camilla ; Cuppers, Felix ; Menzel, Stephan ; Waser, Rainer ; Hoffmann-Eifert, Susanne Abstract Publication: IEEE Transactions on Electron Devices Pub Date: August 2018 DOI: 10.1109/TED.2018.2849872 Bibcode: 2018ITED...65.3229H