Improvement of HfOx-Based RRAM Device Variation by Inserting ALD TiN Buffer Layer Fang, Yichen ; Yu, Zhizhen ; Wang, Zongwei ; Zhang, Teng ; Yang, Yuchao ; Cai, Yimao ; Huang, Ru Abstract Publication: IEEE Electron Device Letters Pub Date: June 2018 DOI: 10.1109/LED.2018.2831698 Bibcode: 2018IEDL...39..819F