Quantum Spin Hall Effect in Graphene
Abstract
We study the effects of spin orbit interactions on the low energy electronic structure of a single plane of graphene. We find that in an experimentally accessible low temperature regime the symmetry allowed spin orbit potential converts graphene from an ideal two-dimensional semimetallic state to a quantum spin Hall insulator. This novel electronic state of matter is gapped in the bulk and supports the transport of spin and charge in gapless edge states that propagate at the sample boundaries. The edge states are nonchiral, but they are insensitive to disorder because their directionality is correlated with spin. The spin and charge conductances in these edge states are calculated and the effects of temperature, chemical potential, Rashba coupling, disorder, and symmetry breaking fields are discussed.
- Publication:
-
Physical Review Letters
- Pub Date:
- November 2005
- DOI:
- 10.1103/PhysRevLett.95.226801
- arXiv:
- arXiv:cond-mat/0411737
- Bibcode:
- 2005PhRvL..95v6801K
- Keywords:
-
- 73.43.-f;
- 72.25.Hg;
- 73.61.Wp;
- 85.75.-d;
- Quantum Hall effects;
- Electrical injection of spin polarized carriers;
- Fullerenes and related materials;
- Magnetoelectronics;
- spintronics: devices exploiting spin polarized transport or integrated magnetic fields;
- Condensed Matter - Mesoscopic Systems and Quantum Hall Effect
- E-Print:
- 4 pages, published version