Large-Gap Quantum Spin Hall Insulators in Tin Films
Abstract
The search for large-gap quantum spin Hall (QSH) insulators and effective approaches to tune QSH states is important for both fundamental and practical interests. Based on first-principles calculations we find two-dimensional tin films are QSH insulators with sizable bulk gaps of 0.3 eV, sufficiently large for practical applications at room temperature. These QSH states can be effectively tuned by chemical functionalization and by external strain. The mechanism for the QSH effect in this system is band inversion at the Γ point, similar to the case of a HgTe quantum well. With surface doping of magnetic elements, the quantum anomalous Hall effect could also be realized.
- Publication:
-
Physical Review Letters
- Pub Date:
- September 2013
- DOI:
- 10.1103/PhysRevLett.111.136804
- arXiv:
- arXiv:1306.3008
- Bibcode:
- 2013PhRvL.111m6804X
- Keywords:
-
- 73.43.-f;
- 71.70.Ej;
- 73.22.-f;
- Quantum Hall effects;
- Spin-orbit coupling Zeeman and Stark splitting Jahn-Teller effect;
- Electronic structure of nanoscale materials: clusters nanoparticles nanotubes and nanocrystals;
- Condensed Matter - Materials Science
- E-Print:
- Phys. Rev. Lett. 111, 136804 (2013)