Competition between Weak Localization and Antilocalization in Topological Surface States
Abstract
A magnetoconductivity formula is presented for the surface states of a magnetically doped topological insulator. It reveals a competing effect of weak localization and weak antilocalization in quantum transport when an energy gap is opened at the Dirac point by magnetic doping. It is found that, while random magnetic scattering always drives the system from the symplectic to the unitary class, the gap could induce a crossover from weak antilocalization to weak localization, tunable by the Fermi energy or the gap. This crossover presents a unique feature characterizing the surface states of a topological insulator with the gap opened at the Dirac point in the quantum diffusion regime.
- Publication:
-
Physical Review Letters
- Pub Date:
- August 2011
- DOI:
- arXiv:
- arXiv:1101.5437
- Bibcode:
- 2011PhRvL.107g6801L
- Keywords:
-
- 73.25.+i;
- 03.65.Vf;
- 73.20.-r;
- 85.75.-d;
- Surface conductivity and carrier phenomena;
- Phases: geometric;
- dynamic or topological;
- Electron states at surfaces and interfaces;
- Magnetoelectronics;
- spintronics: devices exploiting spin polarized transport or integrated magnetic fields;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Disordered Systems and Neural Networks
- E-Print:
- 5 pages, 4 figures