Half-Heusler Compounds as a New Class of Three-Dimensional Topological Insulators
Abstract
Using first-principles calculations within density functional theory, we explore the feasibility of converting ternary half-Heusler compounds into a new class of three-dimensional topological insulators (3DTI). We demonstrate that the electronic structure of unstrained LaPtBi as a prototype system exhibits a distinct band-inversion feature. The 3DTI phase is realized by applying a uniaxial strain along the [001] direction, which opens a band gap while preserving the inverted band order. A definitive proof of the strained LaPtBi as a 3DTI is provided by directly calculating the topological Z2 invariants in systems without inversion symmetry. We discuss the implications of the present study to other half-Heusler compounds as 3DTI, which, together with the magnetic and superconducting properties of these materials, may provide a rich platform for novel quantum phenomena.
- Publication:
-
Physical Review Letters
- Pub Date:
- August 2010
- DOI:
- arXiv:
- arXiv:1008.0057
- Bibcode:
- 2010PhRvL.105i6404X
- Keywords:
-
- 71.15.Dx;
- 71.18.+y;
- 73.20.At;
- 73.61.Le;
- Computational methodology;
- Fermi surface: calculations and measurements;
- effective mass g factor;
- Surface states band structure electron density of states;
- Other inorganic semiconductors;
- Condensed Matter - Materials Science;
- Physics - Computational Physics;
- Quantum Physics
- E-Print:
- 4 pages, 5 figures