Transition between Electron Localization and Antilocalization in Graphene

We show that quantum interference in graphene can result in antilocalization of charge carriers—an increase of the conductance, which is detected by a negative magnetoconductance. We demonstrate that depending on experimental conditions one can observe either weak localization or antilocalization of carriers in graphene. A transition from localization to antilocalization occurs when the carrier density is decreased and the temperature is increased. We show that quantum interference in graphene can survive at high temperatures, up to T∼200K, due to weak electron-phonon scattering.