Evidence for Klein Tunneling in Graphene p-n Junctions
Abstract
Transport through potential barriers in graphene is investigated using a set of metallic gates capacitively coupled to graphene to modulate the potential landscape. When a gate-induced potential step is steep enough, disorder becomes less important and the resistance across the step is in quantitative agreement with predictions of Klein tunneling of Dirac fermions up to a small correction. We also perform magnetoresistance measurements at low magnetic fields and compare them to recent predictions.
- Publication:
-
Physical Review Letters
- Pub Date:
- January 2009
- DOI:
- arXiv:
- arXiv:0806.2319
- Bibcode:
- 2009PhRvL.102b6807S
- Keywords:
-
- 73.23.-b;
- 73.43.Fj;
- 73.63.-b;
- Electronic transport in mesoscopic systems;
- Novel experimental methods;
- measurements;
- Electronic transport in nanoscale materials and structures;
- Condensed Matter - Mesoscopic Systems and Quantum Hall Effect
- E-Print:
- Major changes made: 1) Taking into account properly the contribution of the resistance of monopolar junctions to the odd part of the resistance. To better present the results we use a fitting parameter for the amplitude of screening in graphene. 2) Wrong data for the diffusive model in figures 3, 9 and 10 was plotted in former version. 3) Figure 5 moved to EPAPS