Mott Relation for Anomalous Hall and Nernst Effects in Ga1-xMnxAs Ferromagnetic Semiconductors
Abstract
The Mott relation between the electrical and thermoelectric transport coefficients normally holds for phenomena involving scattering. However, the anomalous Hall effect (AHE) in ferromagnets may arise from intrinsic spin-orbit interaction. In this work, we have simultaneously measured AHE and the anomalous Nernst effect (ANE) in Ga1-xMnxAs ferromagnetic semiconductor films, and observed an exceptionally large ANE at zero magnetic field. We further show that AHE and ANE share a common origin and demonstrate the validity of the Mott relation for the anomalous transport phenomena.
- Publication:
-
Physical Review Letters
- Pub Date:
- September 2008
- DOI:
- arXiv:
- arXiv:0807.4942
- Bibcode:
- 2008PhRvL.101k7208P
- Keywords:
-
- 75.50.Pp;
- 72.15.Jf;
- 73.50.Jt;
- 73.50.Lw;
- Magnetic semiconductors;
- Thermoelectric and thermomagnetic effects;
- Galvanomagnetic and other magnetotransport effects;
- Thermoelectric effects;
- Condensed Matter - Mesoscopic Systems and Quantum Hall Effect;
- Condensed Matter - Materials Science
- E-Print:
- doi:10.1103/PhysRevLett.101.117208