Quantized topological magnetoelectric effect of the zero-plateau quantum anomalous Hall state
Abstract
The topological magnetoelectric effect in a three-dimensional topological insulator is a novel phenomenon, where an electric field induces a magnetic field in the same direction, with a universal coefficient of proportionality quantized in units of e2/2 h . Here, we propose that the topological magnetoelectric effect can be realized in the zero-plateau quantum anomalous Hall state of magnetic topological insulators or a ferromagnet-topological insulator heterostructure. The finite-size effect is also studied numerically, where the magnetoelectric coefficient is shown to converge to a quantized value when the thickness of the topological insulator film increases. We further propose a device setup to eliminate nontopological contributions from the side surface.
- Publication:
-
Physical Review B
- Pub Date:
- August 2015
- DOI:
- arXiv:
- arXiv:1506.03141
- Bibcode:
- 2015PhRvB..92h1107W
- Keywords:
-
- 73.43.-f;
- 73.20.-r;
- 85.75.-d;
- Quantum Hall effects;
- Electron states at surfaces and interfaces;
- Magnetoelectronics;
- spintronics: devices exploiting spin polarized transport or integrated magnetic fields;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 4.5 pages, 4 figures. Selected as an Editors' Suggestion in PRB Rapid Communication