Local gating of a graphene Hall bar by graphene side gates
Abstract
We have investigated the magnetotransport properties of a single-layer graphene Hall bar with additional graphene side gates. The side gating in the absence of a magnetic field can be modeled by considering two parallel conducting channels within the Hall bar. This results in an average penetration depth of the side gate created field of approximately 90nm . The side gates are also effective in the quantum Hall regime and allow to modify the longitudinal and Hall resistances.
- Publication:
-
Physical Review B
- Pub Date:
- December 2007
- DOI:
- arXiv:
- arXiv:0709.2970
- Bibcode:
- 2007PhRvB..76x5426M
- Keywords:
-
- 73.23.-b;
- 73.63.-b;
- 73.43.-f;
- Electronic transport in mesoscopic systems;
- Electronic transport in nanoscale materials and structures;
- Quantum Hall effects;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- Phys. Rev. B 76, 245426 (2007)