Intrinsic electrical transport and performance projections of synthetic monolayer MoS2 devices

We demonstrate monolayer (1L) MoS₂ grown by chemical vapor deposition (CVD) with transport properties comparable to those of the best exfoliated 1L devices over a wide range of carrier densities (up to ∼10¹³ cm^-2) and temperatures (80-500 K). Transfer length measurements decouple the intrinsic material mobility from the contact resistance, at practical carrier densities (>10¹² cm^-2). We demonstrate the highest current density reported to date (∼270 μA μm^-1 or 44 MA cm^-2) at 300 K for an 80 nm long device from CVD-grown 1L MoS₂. Using simulations, we discuss what improvements of 1L MoS₂ are still required to meet technology roadmap requirements for low power and high performance applications. Such results are an important step towards large-area electronics based on 1L semiconductors.