Nonvolatile bipolar resistive switching in amorphous Sr-doped LaMnO3 thin films deposited by radio frequency magnetron sputtering
Abstract
Amorphous Sr-doped LaMnO3 (a-LSMO) thin films were deposited on Pt/Ti/SiO2/Si substrate by radio frequency magnetron sputtering. The Ag/a-LSMO/Pt device exhibited reversible bipolar resistive switching over 100 cycles with a resistance ratio (high resistance state to low resistance state) of over 4 orders of magnitude and stable retention for over 104 s at room temperature. Analysis indicates that the resistive switching originates from the formation/rupture of Ag nanofilaments in the a-LSMO thin films acting as solid electrolytes. The device showed potential for multibit storage as well as low power consumption applications.
- Publication:
-
Applied Physics Letters
- Pub Date:
- April 2013
- DOI:
- Bibcode:
- 2013ApPhL.102m4105L
- Keywords:
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- fracture;
- lanthanum compounds;
- nanostructured materials;
- platinum;
- random-access storage;
- silver;
- solid electrolytes;
- sputter deposition;
- strontium compounds;
- thin films;
- 84.30.Sk;
- Pulse and digital circuits