Piezoresistance behaviors of ultra-strained SiC nanowires

In situ electrical measurement experiments were carried out in individual SiC nanowires (NWs) subjected to tensile strain using a transmission electron microscope. Fracture strain approaching 10% was achieved for a diamond-structure SiC NW with a <111> direction. With an increase in the tensile strain, the conductance increased monotonously. The current rate of increase remained constant prior to fracture. The calculated piezoresistance coefficient of this SiC NW was -1.15 × 10^-11 Pa^-1, which is similar to the coefficient of the bulk material. Our results indicate that these SiC NWs can be used as pressure sensors even in very high-pressure environments.