Optical properties of epitaxially grown zinc oxide films on sapphire by pulsed laser deposition
Abstract
ZnO thin films were epitaxially grown on c-sapphire substrates by pulsed laser deposition at substrate temperatures of 500-800 °C. The crystal structure of ZnO films follow the epitaxial relationship of (0001)ZnO∥(0001)Al2O3(101¯0)ZnO∥(112¯0)Al2O3. Both room temperature and cryogenic temperature photoluminescence showed a remarkable band-edge transition, and clear excitonic structures could be seen at cryogenic temperature. The optical refractive index was measured in the range of 375-900 nm by varying angle spectroscopic ellipsometry. The simulation was carried out using a Sellmeier equation.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- July 1999
- DOI:
- Bibcode:
- 1999JAP....86..408S
- Keywords:
-
- 78.66.Hf;
- 78.55.Et;
- 81.15.Fg;
- 81.05.Dz;
- 68.55.Jk;
- 78.20.Ci;
- 71.35.Cc;
- II-VI semiconductors;
- II-VI semiconductors;
- Laser deposition;
- II-VI semiconductors;
- Structure and morphology;
- thickness;
- crystalline orientation and texture;
- Optical constants;
- Intrinsic properties of excitons;
- optical absorption spectra