Graphene p-n junction arrays as quantum-Hall resistance standards
Abstract
We demonstrate a device concept to fabricate resistance standards made of quantum Hall series arrays by using p-type and n-type graphene. The ambipolar nature of graphene allows fabricating series quantum Hall resistors without complex multi-layer metal interconnect technology, which is required when using conventional GaAs two-dimensional electron systems. As a prerequisite for a precise resistance standard we confirm the vanishing of longitudinal resistance across a p-n junction for metrological relevant current levels in the range of a few microamperes.
- Publication:
-
Applied Physics Letters
- Pub Date:
- July 2011
- DOI:
- arXiv:
- arXiv:1105.0838
- Bibcode:
- 2011ApPhL..99b2112W
- Keywords:
-
- electrical resistivity;
- graphene;
- p-n junctions;
- quantum Hall effect;
- 72.80.Vp;
- 73.40.Lq;
- Other semiconductor-to-semiconductor contacts p-n junctions and heterojunctions;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- accepted for publication in Applied Physics Letters