Epitaxial growth of a silicene sheet
Abstract
Using atomic resolved scanning tunneling microscopy, we present here the experimental evidence of a silicene sheet (graphenelike structure) epitaxially grown on a close-packed silver surface [Ag(111)]. This has been achieved via direct condensation of a silicon atomic flux onto the single-crystal substrate in ultrahigh vacuum conditions. A highly ordered silicon structure, arranged within a honeycomb lattice, is synthesized and present two silicon sublattices occupying positions at different heights (0.02 nm) indicating possible sp2-sp3 hybridizations.
- Publication:
-
Applied Physics Letters
- Pub Date:
- November 2010
- DOI:
- arXiv:
- arXiv:1204.0523
- Bibcode:
- 2010ApPhL..97v3109L
- Keywords:
-
- condensation;
- elemental semiconductors;
- scanning tunnelling microscopy;
- semiconductor epitaxial layers;
- semiconductor growth;
- silicon;
- vapour phase epitaxial growth;
- 68.55.ag;
- 81.05.Cy;
- 81.15.Kk;
- Semiconductors;
- Elemental semiconductors;
- Vapor phase epitaxy;
- growth from vapor phase;
- Condensed Matter - Materials Science;
- Physics - Chemical Physics
- E-Print:
- Applied Physics letters, 97, 223109 (2010)