Suppression of compensation from nitrogen and carbon related defects for p-type N-doped ZnO
Abstract
In this letter, the authors performed a comprehensive study on suppression mechanism of compensation from nitrogen and carbon related complex defects in N-doped ZnO grown by metal-organic chemical vapor deposition. The chemical bonding information of donorlike substitutional complex defects, (NN)O and (NC)O, were restrained with low N/O ratio, leading to the conduction type conversion. High epitaxial temperature has more suppressing effect on the formation of desired acceptor NO than that of (NC)O, as evident by the decreasing hole concentration. Upon utilization of such suppression effect, this study provides a promising route to realize p-type ZnO.
- Publication:
-
Applied Physics Letters
- Pub Date:
- November 2009
- DOI:
- 10.1063/1.3262965
- Bibcode:
- 2009ApPhL..95s2106T
- Keywords:
-
- bonds (chemical);
- doping profiles;
- hole density;
- II-VI semiconductors;
- MOCVD;
- nitrogen;
- semiconductor doping;
- semiconductor epitaxial layers;
- semiconductor growth;
- wide band gap semiconductors;
- zinc compounds;
- 81.15.Gh;
- 61.72.uj;
- 72.20.Fr;
- 73.61.Ga;
- Chemical vapor deposition;
- III-V and II-VI semiconductors;
- Low-field transport and mobility;
- piezoresistance;
- II-VI semiconductors