All jet-printed polymer thin-film transistor active-matrix backplanes
Abstract
Thin-film transistor (TFT) backplanes fabricated by using jet printing as the only patterning method are reported. Additive and subtractive printing processes are combined to make 128×128 pixel active matrix arrays with 340μm pixel size. The semiconductor used, a regioregular polythiophene, poly[5,5'-bis(3-dodecyl-2-thienyl)-2,2'-bithiophene]; (PQT-12) is deposited by inkjet printing and exhibits average TFT mobility of 0.06cm2/Vs, on/off ratios of 106, and minimal bias stress. The printed TFTs have high yield with a narrow performance distribution. The pixel design benefits from the registration accuracy of jet printing and it is shown that the electrical performance is suitable for addressing capacitive media displays.
- Publication:
-
Applied Physics Letters
- Pub Date:
- October 2004
- DOI:
- 10.1063/1.1801673
- Bibcode:
- 2004ApPhL..85.3304A
- Keywords:
-
- 85.30.Tv;
- 61.41.+e;
- 68.55.Ac;
- 68.55.Jk;
- 73.61.Ph;
- 42.79.Kr;
- Field effect devices;
- Polymers elastomers and plastics;
- Nucleation and growth: microscopic aspects;
- Structure and morphology;
- thickness;
- crystalline orientation and texture;
- Polymers;
- organic compounds;
- Display devices liquid-crystal devices