Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
Abstract
We fabricated ZnO thin-film transistors by rf magnetron sputtering on Si substrates held near room temperature. The best devices had field-effect mobility of more than 2 cm2/V s and an on/off ratio>106. These ZnO films had resistivity ∼105 ohm cm, with high optical transparency (>80% for wavelength >400 nm), and compressive stress <0.5 GPa. The combination of transparency in the visible, excellent transistor characteristics, and low-temperature processing makes ZnO thin-film transistors attractive for flexible electronics on temperature sensitive substrates.
- Publication:
-
Applied Physics Letters
- Pub Date:
- February 2003
- DOI:
- 10.1063/1.1553997
- Bibcode:
- 2003ApPhL..82.1117C
- Keywords:
-
- 85.30.Tv;
- 81.15.Cd;
- 85.30.De;
- 72.20.Ee;
- 78.20.Ci;
- Field effect devices;
- Deposition by sputtering;
- Semiconductor-device characterization design and modeling;
- Mobility edges;
- hopping transport;
- Optical constants