Electronic properties of the metastable defect in boron-doped Czochralski silicon: Unambiguous determination by advanced lifetime spectroscopy
Abstract
By combining data from temperature- and injection-dependent lifetime spectroscopy (TDLS and IDLS) measured by means of the microwave-detected photoconductance decay technique and the quasi-steady state photoconductance technique, respectively, the exact electronic structure of the metastable defect in standard boron-doped Czochralski (Cz) silicon has been determined. A detailed Shockley-Read-Hall analysis of the entire TDLS curve reveals that the Cz-specific defect acts as an attractive Coulomb center [σn(T)=σn0T-2] which is localized in the upper band-gap half at EC-Et=0.41 eV and has an electron/hole capture cross section ratio k=σn/σp=9.3. The accuracy of this determination manifests itself by the fact that the corresponding IDLS curve can be simulated with the same parameter set.
- Publication:
-
Applied Physics Letters
- Pub Date:
- February 2003
- DOI:
- 10.1063/1.1544431
- Bibcode:
- 2003ApPhL..82.1054R
- Keywords:
-
- 71.55.Cn;
- 72.20.Jv;
- 72.40.+w;
- Elemental semiconductors;
- Charge carriers: generation recombination lifetime and trapping;
- Photoconduction and photovoltaic effects