Spin blockade and lifetime-enhanced transport in a few-electron Si/SiGe double quantum dot
Abstract
The observation of spin blockade and lifetime-enhanced transport effects in Si/SiGe double quantum dots represents a promising step in the development of silicon-based quantum devices.
- Publication:
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Nature Physics
- Pub Date:
- July 2008
- DOI:
- arXiv:
- arXiv:0708.0794
- Bibcode:
- 2008NatPh...4..540S
- Keywords:
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- Condensed Matter - Mesoscopic Systems and Quantum Hall Effect
- E-Print:
- Published version. Supplementary Information in appendices