Atomically thin p–n junctions with van der Waals heterointerfaces

doi:10.1038/nnano.2014.150

Atomically thin p–n junctions with van der Waals heterointerfaces

In heterostructures of the transition metal dichalcogenides MoS₂ and WSe₂, atomically thin p–n junctions are created that show gate-tunable rectifying and photovoltaic behaviour mediated by tunnelling-assisted interlayer recombination.

Publication:

Nature Nanotechnology

Pub Date:

September 2014

DOI:

10.1038/nnano.2014.150

10.48550/arXiv.1403.3062

arXiv:

arXiv:1403.3062

Bibcode:

2014NatNa...9..676L

Keywords:

Condensed Matter - Mesoscale and Nanoscale Physics

E-Print:

29 pages, 3 figures in main &amp

ADS

Atomically thin p–n junctions with van der Waals heterointerfaces

Abstract