Valley magnetoelectricity in single-layer MoS<SUB>2</SUB>

doi:10.1038/nmat4931

Valley magnetoelectricity in single-layer MoS₂

Valley magnetization in single-layer MoS₂ is demonstrated by breaking the three-fold rotational symmetry via uniaxial stress. The results are consistent with a theoretical model of valley magnetoelectricity driven by Berry curvature effects.

Publication:

Nature Materials

Pub Date:

September 2017

DOI:

10.1038/nmat4931

10.48550/arXiv.1707.03999

arXiv:

arXiv:1707.03999

Bibcode:

2017NatMa..16..887L

Keywords:

Condensed Matter - Mesoscale and Nanoscale Physics

E-Print:

12 pages, 4 figures

ADS

Valley magnetoelectricity in single-layer MoS2

Abstract

Valley magnetoelectricity in single-layer MoS₂