Graphene nano-ribbon electronics
Abstract
We have fabricated graphene nano-ribbon field-effect transistor devices and investigated their electrical properties as a function of ribbon width. Our experiments show that the resistivity of a ribbon increases as its width decreases, indicating the impact of edge states. Analysis of temperature-dependent measurements suggests a finite quantum confinement gap opening in narrow ribbons. The electrical current noise of the graphene ribbon devices at low frequency is found to be dominated by the 1/ f noise.
- Publication:
-
Physica E Low-Dimensional Systems and Nanostructures
- Pub Date:
- December 2007
- DOI:
- arXiv:
- arXiv:cond-mat/0701599
- Bibcode:
- 2007PhyE...40..228C
- Keywords:
-
- 72.80.Rj;
- 73.22.-f;
- 73.63.-b;
- Fullerenes and related materials;
- Electronic structure of nanoscale materials: clusters nanoparticles nanotubes and nanocrystals;
- Electronic transport in nanoscale materials and structures;
- Condensed Matter - Materials Science;
- Condensed Matter - Mesoscopic Systems and Quantum Hall Effect
- E-Print:
- 6 pages, 7 figures
