Oxygen-doped boron nitride nanosheets with excellent performance in hydrogen storage
Abstract
Hydrogen is considered one of the best energy sources. However, the lack of effective, stable, and safe storage materials has severely prevented its practical application. Strong effort has been made to try new nanostructured materials as new storage materials. In this study, oxygen-doped boron nitride (BN) nanosheets with 2–6 atomic layers, synthesized by a facile sol–gel method, show a storage capacity of 5.7wt% under 5MPa at room temperature, which is the highest hydrogen storage ever reported for any BN materials. Importantly, 89% of the stored hydrogen can be released when the hydrogen pressure is reduced to ambient conditions. Furthermore, the BN nanosheets exhibit an excellent storage cycling stability due to the stable two-dimensional nanostructure. The first principles calculations reveal that the high hydrogen storage mainly origins from the oxygen-doping of the BN nanosheets with increased adsorption energies of H2 on BN by 20–80% over pure BN sheets at the different coverage.
- Publication:
-
Nano Energy
- Pub Date:
- May 2014
- DOI:
- 10.1016/j.nanoen.2014.04.004
- Bibcode:
- 2014NEne....6..219L
- Keywords:
-
- Boron nitride;
- First-principle calculations;
- Material science;
- Nitrides;
- Nanostructures