Effect of anodic oxidation time on resistive switching memory behavior based on amorphous TiO2 thin films device

Resistance random access memory (RRAM) is a promising memory technology in the applications of memory device. Herein, the amorphous TiO₂ thin film was grown onto titanium (Ti) foil by anodic oxidation. Further, the Ag/TiO₂/Ti sandwich structure device was prepared, which displays a resistive switching memory effect with a high HRS/LRS resistance ratio with ∼27 at room temperature when the TiO₂ film was oxidized ∼5 min. Finally, the formation/rupture models of Ag conductive filaments are suggested to explain the resistive switching memory behavior. This work open a new way for preparing the RRAM device for memory applications in the future.