Printing of Quasi-2D Semiconducting β-Ga2O3 in Constructing Electronic Devices via Room-Temperature Liquid Metal Oxide Skin
Abstract
Quasi-2D β-Ga2O3 is a rediscovered metal-oxide semiconductor with the advantage of an ultrawide bandgap of 4.6-4.9 eV. It is reported to be a promising material for next-generation power and radio-frequency electronics. However, realizing macroelectronics based on β-Ga2O3 film is challenging due to the nonuniformity and improper thickness of the film. Herein, a straightforward and rapid impact fabrication method for depositing high-quality β-Ga2O3 films is introduced. Structural and film properties of the deposited β-Ga2O3 are characterized using scanning electron microscopy, X-ray diffraction, and atomic force microscopy. To illustrate the applicability of the deposited β-Ga2O3 in constructing electronic devices, β-Ga2O3-based field-effect transistors (FETs) are fabricated with a source-drain spacing of 400 μm. Films of β-Ga2O3 exhibit a good performance with carrier mobilities as high as 21.3 cm2 V-1 s-1, transconductances of 1.4 μS, and on/off current ratios of 104. The device performances indicate a big potential of β-Ga2O3 for future power device applications. The method paves the way for future application of β-Ga2O3 in electronics. It also provides a scalable approach for the integration of 2D morphologies of industrially important semiconductors into emerging electronics and optical devices.
- Publication:
-
Physica Status Solidi Rapid Research Letters
- Pub Date:
- September 2019
- DOI:
- 10.1002/pssr.201900271
- Bibcode:
- 2019PSSRR..1300271L